ROHM Semiconductor US6T4TR BJTs - 바이폴라 트랜지스터 BIPOLAR PNP

Width: 1.7 mm

Height: 0.77 mm

Length: 2 mm

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 400 mW

DC Current Gain hFE Max: 680 at - 500 mA, - 2 V

Gain Bandwidth Product fT: 280 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: - 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at - 500 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 250 mV