SemiQ GCMX005A120S7B1 하프 브리지 SiC 1200V 5mohm MOSFET 하프 브리지 모듈

Fall Time: 25 ns

Rise Time: 20 ns

Technology: SiC

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.042 kW

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Typical Turn-On Delay Time: 61 ns

Typical Turn-Off Delay Time: 96 ns

Id - Continuous Drain Current: 348 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 4.9 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V