SemiQ GCMX020A120B2B1P 하프 브리지 SiC 1200V 20mohm MOSFET 하프 브리지 모듈

Fall Time: 16 ns

Rise Time: 8 ns

Technology: SiC

REACH - SVHC: Details

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Pd - Power Dissipation: 385 W

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 42 ns

Id - Continuous Drain Current: 102 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 19 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V