SemiQ GCMX080B120S1-E1 고속 스위칭 SiC 1200V 80mΩ MOSFET SOT-227

Fall Time: 11 ns

Rise Time: 4 ns

Technology: SiC

REACH - SVHC: Details

Configuration: Single

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vf - Forward Voltage: 3.8 V at 10 A

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 142 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 77 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2 V