Vishay Siliconix SI3129DV-T1-GE3 MOSFETs TSOPP C HAN8 0V

Fall Time: 12 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 20 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: TrenchFET Power MOSFET

Qg - Gate Charge: 12 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 4.2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 5.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 82.7 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V