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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Technology: Si
Unit Weight: 4 g
Mounting Style: Through Hole
Transistor Polarity: P-Channel
Id - Continuous Drain Current: 23 A
Rds On - Drain-Source Resistance: 117 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2 V