Stanford SIM918 정밀 전류 전치 증폭기 (106 V/A, 107 V/A , 108 V/A)

Input offset voltage: <10 µV (autozero enabled)

Input impedance: <1Ω (DC), 18 pF

Current gain: 106 V/A, 107 V/A or 108 V/A

Gain accuracy:

   (106 V/A): ±0.1 %

   (107 V/A): ±0.1 %

   (108 V/A): ±2 %

Gain stability:

   (106 V/A): ±10 ppm/°C

   (107 V/A): ±50 ppm/°C

   (108 V/A): ±100 ppm/°C

Bandwidth (typ.):

   (106 V/A): 22 kHz

   (107 V/A): 12 kHz

   (108 V/A): 4 kHz

Input noise (typ.):

   (106 V/A): 130 fA/√Hz at 100 Hz

   (107 V/A): 42 fA/√Hz at 100 Hz

   (108 V/A): 15 fA/√Hz at 100 Hz

AC bias current: 3.5 pA rms (w/ autozero engaged)

DC bias current: <2 pA

Bias Input:

Range: ±5 VDC

Frequency response: 0.2 Hz

Input impedance: 10 MΩ

Input BNC shield: Ground or float

Output: 

Range: ±10 V

Max. current: 100 mA

General:

Operating temperature: 0 °C to 40 °C, non-condensing

Interface: Serial via SIM interface

Connectors: BNC (3 front, 2 rear)

DB15 (male): SIM interface

Power: Power supplied by the SIM900 Mainframe, or optionally by a user-supplied DC power supply (±15 V and +5 V).

Dimensions: 1.5" × 3.6" × 7.0" (WHL)

Weight: 1.7 lbs.

Datasheet

Manual