STMicroelectronics BCP56-16 BJTs - 바이폴라 트랜지스터 NPN 중전압

Width: 3.5 mm

Height: 1.8 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.6 W

DC Current Gain hFE Max: 250

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV