STMicroelectronics BD135-16 BJTs - 바이폴라 트랜지스터 NPN 실리콘 트랜지스터

Width: 2.7 mm

Height: 10.8 mm

Length: 7.8 mm

Technology: Si

Unit Weight: 60 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.25 W

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 45 V

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 500 mV