STMicroelectronics BUX87 BJTs - 바이폴라 트랜지스터 NPN 고전압 파워

Technology: Si

Unit Weight: 60 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 40 W

Gain Bandwidth Product fT: 20 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 450 V

Collector-Emitter Saturation Voltage: 1 V