STMicroelectronics D45H11FP BJTs - 바이폴라 트랜지스터 PNP GEN PUR 스위치

Technology: Si

Unit Weight: 2.300 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 36 W

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: - 10 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1 V