STMicroelectronics L6491DTR 하이사이드, 로우사이드 고전압 하이 및 로우사이드 4A 게이트 드라이버

Features: Integrated bootstrap diode, Adjustable deadtime, Interlocking function, Comparator for fault protections

Shutdown: Shutdown

Fall Time: 15 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 130 mg

Mounting Style: SMD/SMT

Off Time - Max: 120 ns

Output Current: 4 A

Output Voltage: 580 V

Number of Drivers: 2 Driver

Number of Outputs: 2 Output

Moisture Sensitive: Yes

Supply Voltage - Max: 20 V

Supply Voltage - Min: 10 V

Pd - Power Dissipation: 1 W

Maximum Turn-On Delay Time: 120 ns

Maximum Turn-Off Delay Time: 120 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 175 Ohms