STMicroelectronics MASTERGAN1LTR 하프 브리지 600 V 하프 브리지 향상 모드 GaN HEMT 고전압 드라이버

Shutdown: Shutdown

Technology: GaN

Configuration: Non-Inverting

Mounting Style: SMD/SMT

Output Current: 17 A

Number of Outputs: 4 Output

Moisture Sensitive: Yes

Supply Voltage - Max: 9.5 V

Supply Voltage - Min: 4.75 V

Pd - Power Dissipation: 40 mW

Propagation Delay - Max: 70 ns

Operating Supply Current: 10 A

Maximum Turn-On Delay Time: 45 ns

Maximum Turn-Off Delay Time: 45 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 330 mOhms