STMicroelectronics MASTERGAN4TR 하프 브리지 고전력 밀도 600V 하프 브리지 드라이버, 두 개의 향상 모드 GaN 전력 HEMT

Features: 600 V System-in-Package Integrating Half-Bridge Gate Driver

Dimensions: 9 mm x 9 mm x1 mm

Unit Weight: 150 mg

Mounting Style: SMD/SMT

Number of Drivers: 2 Driver

Number of Outputs: 3 Output

Moisture Sensitive: Yes

Input Voltage - Max: 15 V

Input Voltage - Min: 3.3 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 225 mOhms