STMicroelectronics MJD112T4 다링턴 트랜지스터 NPN 파워 다링턴

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Maximum Collector Cut-off Current: 20 uA

Collector- Emitter Voltage VCEO Max: 100 V