STMicroelectronics STB120N4LF6 MOSFETs N-채널 40V 3.1 옴 STripFET VI DeepGATE

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 80 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 110 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V