STMicroelectronics STD86N3LH5 MOSFETs N-채널 30 V

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Fall Time: 10.8 ns

Rise Time: 14 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 14 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 70 W

Vgs - Gate-Source Voltage: - 22 V, + 22 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 23.6 ns

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V