STMicroelectronics STDRIVEG611Q 하프 브리지 고전압 및 고속 하프 브리지 게이트 드라이버 for GaN 전력 스위치

Shutdown: No Shutdown

Fall Time: 22 ns

Rise Time: 11 ns

Technology: GaN

Unit Weight: 44 mg

Configuration: Inverting, Non-Inverting

Mounting Style: SMD/SMT

Number of Drivers: 2 Driver

Number of Outputs: 3 Output

Moisture Sensitive: Yes

Input Voltage - Max: 20 V

Input Voltage - Min: 3.3 V

Supply Voltage - Max: 18 V

Supply Voltage - Min: 10.6 V

Maximum Turn-On Delay Time: 60 ns

Maximum Turn-Off Delay Time: 60 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C