STMicroelectronics STF6N95K5 MOSFETs N-채널 950V 1옴 9A 제너 MDmesh K5

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 25 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.25 Ohms

Vds - Drain-Source Breakdown Voltage: 950 V

Vgs th - Gate-Source Threshold Voltage: 5 V