STMicroelectronics STGAP2SICSACTR 갈바닉 절연 게이트 드라이버 SiC MOSFET용 갈바닉 절연 4A 단일 게이트 드라이버

Features: AEC-Q100 Qualified

Shutdown: Shutdown

Fall Time: 30 ns

Rise Time: 30 ns

Logic Type: Rail to Rail

Technology: SiC

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Output Current: 4 A

Isolation Voltage: 5 kV

Number of Drivers: 1

Number of Outputs: 1 Output

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Input Voltage - Max: 5.25 V

Input Voltage - Min: 3.1 V

Supply Voltage - Max: 5.25 V

Supply Voltage - Min: 3.1 V

Propagation Delay - Max: 95 ns

Maximum Turn-On Delay Time: 95 ns

Maximum Turn-Off Delay Time: 95 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 1.12 Ohms

Maximum Continuous Output Current: 4 A