STMicroelectronics STGP8M120DF3 IGBT 트랜지스터 트렌치 게이트 필드-스톱, 1200 V, 8 A 저손실 M 시리즈 IGBT

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 167 W

Gate-Emitter Leakage Current: 250 uA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 8 A

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 16 A