STMicroelectronics STN9360 BJTs - 바이폴라 트랜지스터 고전압 고속 스위치 PNP 전력 트랜지스터

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.6 W

DC Current Gain hFE Max: 200

Emitter- Base Voltage VEBO: 7 V

Continuous Collector Current: - 0.5 V

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 500 mV