STMicroelectronics STP15NM65N MOSFETs N-채널 650V 전력 MOSFET

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Fall Time: 26 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 33.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: 15.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 270 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V