STMicroelectronics STU3N45K3 MOSFETs N-채널 450V 3.2 옴 1.8A SuperMESH 3

Technology: Si

Unit Weight: 340 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 27 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 1.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3.8 Ohms

Vds - Drain-Source Breakdown Voltage: 450 V

Vgs th - Gate-Source Threshold Voltage: 3 V