STMicroelectronics STW9NK95Z MOSFETs N-채널 950 V, 1.15 옴 전형 7 A SuperMESH 파워 MOSFET

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 160 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.38 Ohms

Vds - Drain-Source Breakdown Voltage: 950 V

Vgs th - Gate-Source Threshold Voltage: 3 V