STMicroelectronics STY105NM50N MOSFETs N-채널 500V 0.018 옴 110A Mdmesh II FET

Technology: Si

Unit Weight: 5 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 326 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Id - Continuous Drain Current: 88 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 22 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V