STMicroelectronics STY60NM50 MOSFET N-채널 500볼트 60암페어

Width: 5.3 mm

Height: 20.3 mm

Length: 15.9 mm

Fall Time: 46 ns

Rise Time: 58 ns

Technology: Si

Unit Weight: 5 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 266 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 560 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 51 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 3 V