Texas Instruments CSD13306W 트랜스 MOSFET N-채널 12V 3.5A 6-핀 DSBGA T/R

Vgs(th): 1.3 V

Vgs (Max): 10V

Gate Charge (Qg): 11.2nC

Power consumption: 1.9W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 12V

Continuous drain current: 3.5A

Input Capacitance (Ciss): 1370pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 10.2mOhm

Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V