Texas Instruments CSD17484F4T MOSFET

Vgs(th): 1.1 V

Vgs (Max): 12V

Gate Charge (Qg): 0.2nC

Power consumption: 500mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 3A

Input Capacitance (Ciss): 195pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 121mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|8V