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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Vgs(th): 1.7 V
Vgs (Max): 20V
Gate Charge (Qg): 51nC
Power consumption: 3.2|96W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 100A
Input Capacitance (Ciss): 9200pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 1.15mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
