Texas Instruments CSD17576Q5BT 파워 MOSFET

Type: Power MOSFET

Vgs(th): 1.8 V

Vgs (Max): 20V

Gate Charge (Qg): 32nC

Power consumption: 3.1|125W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 100A

Input Capacitance (Ciss): 4430pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 2mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V