Texas Instruments CSD23201W10 파워 MOSFET

Type: Power MOSFET

Vgs(th): 1 V

Vgs (Max): -6V

Gate Charge (Qg): 2.4nC

Power consumption: 1W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 12V

Continuous drain current: 2.2A

Input Capacitance (Ciss): 325pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 82mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.5|4.5V