Texas Instruments CSD23202W10 MOSFETs 12V P-채널 NexFET 전력 MOSFET A 595-CSD23202W10T

Width: 1 mm

Height: 0.62 mm

Length: 1 mm

Fall Time: 21 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 200 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 3.8 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 58 ns

Id - Continuous Drain Current: 2.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5.6 S

Rds On - Drain-Source Resistance: 92 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 900 mV