Texas Instruments CSD85302LT MOSFETs 20V 듀얼 N 채널 MOSFET A 595-CSD85302L

Width: 1.35 mm

Height: 0.22 mm

Length: 1.35 mm

Fall Time: 99 ns

Rise Time: 54 ns

Technology: Si

Unit Weight: 1.200 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 6 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.7 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 37 ns

Typical Turn-Off Delay Time: 173 ns

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 24 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 680 mV