Transphorm TP65H100G4PS GaN FET 650V, 100mohm TO220 패키지 GaN FET

Fall Time: 7.5 ns

Rise Time: 7.1 ns

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 14.4 nC

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 65.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 58 ns

Id - Continuous Drain Current: 18.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 110 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3.65 V