Vishay General Semiconductor SI4848DY-T1-GE3 MOSFETs 150V Vds 20V Vgs SO-8

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 17 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 187 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 21 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 24 ns

Id - Continuous Drain Current: 3.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 15 S

Rds On - Drain-Source Resistance: 85 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 2 V