Vishay General Semiconductor SIHP24N65E-E3 MOSFETs 650V Vds 30V Vgs TO-220AB

Width: 4.7 mm

Height: 15.49 mm

Length: 10.41 mm

Fall Time: 69 ns

Rise Time: 84 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 81 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 24 ns

Typical Turn-Off Delay Time: 70 ns

Id - Continuous Drain Current: 24 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 145 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V