Vishay SI1972DH-T1-E3 MOSFET

FET Feature: Standard

Mounting Type: Surface Mount

Power-Maximum: 1.25W

Operating temperature: -55 to 150C

Drain to Source voltage: 30V

Current - Drain (Id) (25°C): 1.3A

Field-effect transistor type: 2N-Channel(Dual)

Gate Charge - (when applying Vgs): 2.8nC@10V

On Voltage - (Vgs when Id is applied): 2.8V@250uA

On Resistance - (Rds when Id,Vgs is applied): 225mOhm@1.3A|10V

Input Capacitance - (Ciss when Vds is applied): 75pF@15V