Vishay SI3460DV-T1-E3 MOSFET

Vgs(th): 0.45V

Vgs (Max): 8V

Gate Charge (Qg): 20nC

Power consumption: 1.1W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 5.1A

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 27mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V

Datasheet