Vishay SI4438DY-T1-E3 MOSFET

Vgs(th): 2.6 V

Vgs (Max): 20V

Gate Charge (Qg): 126nC

Power consumption: 3.5|7.8W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 36A

Input Capacitance (Ciss): 4645pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 2.7mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V