Vishay SI4916DY-T1-E3 MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 3.3W|3.5W

Operating temperature: -55 to 150C

Drain to Source voltage: 30V

Continuous drain current: 10A/10.5A

Current - Drain (Id) (25°C): 10|10.5A

Field-effect transistor type: N-Channel2Pieces(Half Bridge)

Gate Charge - (when applying Vgs): 10nC@4.5V

On Voltage - (Vgs when Id is applied): 3V@250uA

On Resistance - (Rds when Id,Vgs is applied): 18mOhm@10A|10V

Datasheet