Vishay SI7136DP-T1-E3 MOSFET

Vgs(th): 3 V

Vgs (Max): 20V

Gate Charge (Qg): 78nC

Power consumption: 5|39W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 30A

Input Capacitance (Ciss): 3380pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 3.2mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V