Vishay SIDR220DP-T1-GE3 MOSFET

Vgs(th): 2.1 V

Vgs (Max): +16|-12V

Gate Charge (Qg): 200nC

Power consumption: 6.25|125W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 25V

Continuous drain current: 87.7A/100A

Input Capacitance (Ciss): 1085pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 5.8mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V