Vishay SIHK185N60E-T1-GE3 MOSFETs PWRPK 600V 19A E 시리즈

Fall Time: 46 ns

Rise Time: 98 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 33 nC

Number of Channels: 1 Channel

Pd - Power Dissipation: 114 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 22 ns

Id - Continuous Drain Current: 19 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 160 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5 V