Vishay SIRA64DP-T1-GE3 MOSFET

Vgs(th): 2.2 V

Vgs (Max): +20|-16V

Gate Charge (Qg): 65nC

Power consumption: 27.8W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 60A

Input Capacitance (Ciss): 3420pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 2.1mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V