Wolfspeed C3M0016120D SiC MOSFETS 1.2kV 15mOHMS G3 SiC MOSFET

Fall Time: 27 ns

Rise Time: 28 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 207 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 556 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Typical Turn-On Delay Time: 174 ns

Typical Turn-Off Delay Time: 84 ns

Id - Continuous Drain Current: 115 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 53 S

Rds On - Drain-Source Resistance: 22.3 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V