YAGEO XSemi XP4509AGM MOSFETs 보완형 N 채널 + P 채널 30V/-30

Fall Time: 9.5 ns

Rise Time: 6.5 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 12 nC

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 8 A, 11.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 20 S

Rds On - Drain-Source Resistance: 10 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 3 V