YAGEO XSemi XP50AN1K5H MOSFETs N-CH 500V 5A TO-252

Width: 6.50 mm

Height: 2.30 mm

Length: 9.43 mm

Fall Time: 28 ns

Rise Time: 17 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: N-Channel

Qg - Gate Charge: 15.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 90 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6 S

Rds On - Drain-Source Resistance: 1.5 Ohms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 4 V