YAGEO XSemi XP6677GH MOSFETs P-CH -40V -60 A TO-252

Width: 6.50 mm

Height: 2.30 mm

Length: 9.43 mm

Fall Time: 120 ns

Rise Time: 60 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 44 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 69 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 46 S

Rds On - Drain-Source Resistance: 12.3 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 3 V