onsemi NVH4L022N120M3S SiC MOSFETS SIC MOS TO247-4L 22MOHM 1200V
생산업체: onsemi Model: NVH4L022N120M3S - 연락처
Fall Time: 13 ns
Rise Time: 24 ns
Technology: SiC
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 151 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 352 W
Vgs - Gate-Source Voltage: - 10 V, + 22 V
Typical Turn-On Delay Time: 18 ns
Typical Turn-Off Delay Time: 48 ns
Id - Continuous Drain Current: 68 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 34 S
Rds On - Drain-Source Resistance: 30 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 4.4 V
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